DocumentCode
1080837
Title
A novel electro-optically controlled directional-coupler switch in GaAs epitaxial layers at 1.15 µm
Author
Benson, Trevor M. ; Murotani, Toshio ; Robson, Peter N. ; Houston, Peter A.
Author_Institution
University of Sheffield, Sheffield, England
Volume
29
Issue
9
fYear
1982
fDate
9/1/1982 12:00:00 AM
Firstpage
1477
Lastpage
1483
Abstract
Strain-induced refractive index changes in the vicinity of a remote-edge discontinuity in a metal film deposited on a n-n+GaAs epitaxial layer, give rise to confinement of light. The edge waveguide so formed supports one TE and one TM polarized mode. The propagation constant of the TE mode may be altered by inducing a small refractive-index change through the electro-optic effect.
Keywords
Directional couplers; Electrodes; Epitaxial layers; Finite difference methods; Gallium arsenide; Optical films; Propagation constant; Refractive index; Switches; Tellurium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20899
Filename
1482396
Link To Document