DocumentCode :
1080845
Title :
Fabrication of an optical directional coupler of CdTe by electron beam lithography and ion etching
Author :
Nishimura, Tadashi ; Aritome, Hiroaki ; Namba, Susumu
Author_Institution :
LSI Lab., Mitsubishi Electric Corp., Hyogo, Japan
Volume :
16
Issue :
12
fYear :
1980
fDate :
12/1/1980 12:00:00 AM
Firstpage :
1337
Lastpage :
1340
Abstract :
Various kinds of high resolution techniques such as ion etching, chemical etching, ion implantation, and electron beam lithography are studied for fabricating CdTe optical integrated circuits. It is found that the ion-etching rate of CdTe is high and has only a small dependence on crystal orientation. A special chemical etching solution for aluminum on CdTe that does not corrode CdTe and proton implanted CdTe is used for high resolution patterning of CdTe. The smooth patterns in PMMA resist produced by an electron beam exposure is replicated deep into 2.5 μm of CdTe face through the aluminum layer. Rib guides and a rib-type optical directional coupler are fabricated from planar guides by using proton implantation which makes refractive index change on CdTe face. The two-dimensional optical confinement is observed. A coupling coefficient of k \\simeq 0.39 mm-1is observed in the rib-type optical directional coupler.
Keywords :
Cadmium materials/devices; Optical directional couplers; Optical strip waveguide couplers; Chemicals; Directional couplers; Electron beams; Electron optics; Etching; Lithography; Optical device fabrication; Optical refraction; Optical variables control; Particle beam optics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070419
Filename :
1070419
Link To Document :
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