DocumentCode
1080848
Title
Output properties of charge-injection devices: Part I—Read on injection
Author
Weinberg, Donald L. ; Milton, Fenner A.
Author_Institution
Naval Research Laboratory, Washington, DC
Volume
29
Issue
9
fYear
1982
fDate
9/1/1982 12:00:00 AM
Firstpage
1483
Lastpage
1490
Abstract
New information concerning the readout of charge-injection device (CID) arrays, used for optical detection, is obtained from the well known Kirchhoff voltage equation for surface potential. Emphasis is placed on those readout modes involving read on injection which have been found useful with infrared-sensitive CID´s. The theory obtained relates surface potential, depletion depth, mobile charge in the inversion well, and voltage on the floating gate before, during, and after injection. Previous work which obtained some properties of individual gates with filled or empty inversion wells is extended to pairs of coupled gates and partially filled potential wells. Coupled gates operating in ideal mode and in charge-sharing mode, with either column injection or row injection are included. Additional properties derived are high-frequency differential capacitance, output voltage, readout efficiency and its differential analog, transient response, charge-sharing efficiency, and differential charge-sharing efficiency. Numerical computations are given for representative CID pixels on InSb.
Keywords
Capacitance; Charge carrier density; Charge coupled devices; Equations; Gallium arsenide; Optical fiber couplers; Optical waveguide theory; Optical waveguides; Optimized production technology; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20900
Filename
1482397
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