• DocumentCode
    1080908
  • Title

    Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well

  • Author

    Ishikawa, Takuya ; Bowers, John E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    30
  • Issue
    2
  • fYear
    1994
  • fDate
    2/1/1994 12:00:00 AM
  • Firstpage
    562
  • Lastpage
    570
  • Abstract
    We describe the band lineups of InGaAlAs on (001) InP as well as InGaAsP on (001) InP system with strain effects, based on the Harrison model. We show that the compressive strain does not affect the band position so much, and tensile strain raises the band position in the InGaAsP system. It is also shown that both compressive and tensile strains raise the band positions in the InGaAlAs system. The conduction and valence band positions of InGaAs, InGaAsP, and InGaAlAs relative to InP valence band are given in approximate formulas as a function of the strain. We calculate the energy versus in-plane wave vector relationship of the InGaAsP/InGaAs(P) InGaAlAs/InGa(Al)As on InP strained quantum-well systems. We obtain the in-plane effective mass of the strained quantum-well system by fitting the dispersion relationship to a parabolic curve. The in-plane effective masses of several kinds of strained quantum-well systems are listed
  • Keywords
    III-V semiconductors; aluminium compounds; conduction bands; effective mass (band structure); gallium arsenide; indium compounds; semiconductor quantum wells; valence bands; (001)InP; Harrison model; InGaAlAs-InP; InGaAsP-InP; band lineups; compressive strain; conduction band; dispersion relationship; in-plane effective mass; strained-layer quantum well; tensile strain; valence band; Capacitive sensors; Conducting materials; Curve fitting; Dispersion; Effective mass; Indium gallium arsenide; Indium phosphide; Optical modulation; Quantum well lasers; Quantum wells; Semiconductor lasers; Tensile strain;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.283804
  • Filename
    283804