A p-i-n heterojunction model for the thin-film CuInSe2/CdS solar cell

By treating the high-resistivity CdS and CuInSe2layers in high efficiency cells as insulating, a simple p-i-n model results that predicts the behavior seen in these cells. The relatively low open-circuit voltage and the diode factor are both directly related to the width of the insulating CdS layer. Substantial improvements in both Vocand fill factor can be expected if the width of this CdS layer can be reduced.