• DocumentCode
    1080934
  • Title

    A p-i-n heterojunction model for the thin-film CuInSe2/CdS solar cell

  • Author

    Rothwarf, Allen

  • Author_Institution
    Drexel University, Philadelphia, PA
  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1513
  • Lastpage
    1515
  • Abstract
    By treating the high-resistivity CdS and CuInSe2layers in high efficiency cells as insulating, a simple p-i-n model results that predicts the behavior seen in these cells. The relatively low open-circuit voltage and the diode factor are both directly related to the width of the insulating CdS layer. Substantial improvements in both Vocand fill factor can be expected if the width of this CdS layer can be reduced.
  • Keywords
    Charge carrier processes; Helium; Heterojunctions; Insulation; Low voltage; P-i-n diodes; PIN photodiodes; Photovoltaic cells; Spontaneous emission; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20907
  • Filename
    1482404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080934