DocumentCode
1080956
Title
Comparison of the responsivity of W-Ni point contact MBM diodes with W-Si point contact Schottky diodes
Author
Yasuoka, Y. ; Sakurada, T. ; Miyata, T. ; Gustafson, T.K.
Author_Institution
National Defense Academy, Hashirimizu, Yokosuka, Japan
Volume
16
Issue
12
fYear
1980
fDate
12/1/1980 12:00:00 AM
Firstpage
1372
Lastpage
1375
Abstract
The responsivities of the W-Ni point contact MBM diode and the W-Si point contact Schottky diode (commercial 1N23B diode) are compared at 9.5 GHz under identical conditions. The MBM diode has almost half the responsivity of the Schottky diode and was measured to be ≃20 V/W for a 550 Ω termination. The responsivity of the MBM diode decreases with an increase of the frequency. However, this is not due to the RC time constant of MBM diodes, but due to the antenna properties of the whisker and the relaxation behavior of the metallic whisker antenna.
Keywords
MBM devices; Nickel materials/devices; Point-contact diodes; Schottky-barrier diodes; Silicon materials/devices; Tungsten materials/devices; Capacitance; Delay; Detectors; Fabrication; Frequency; Schottky diodes; Thin film devices; Transistors; Tungsten; Voltage;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070429
Filename
1070429
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