Title :
Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength
Author :
Kishino, Katsumi ; Suematsu, Yasuharu ; Takahashi, Yoshio ; Tanbun-Ek, Tawee ; Itaya, Yoshio ; Tanbun-Ek, T. ; Itaya, Y.
Author_Institution :
Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
fDate :
2/1/1980 12:00:00 AM
Abstract :
Fabrication and lasing properties of novel GaInAsP/InP injection lasers at 1.3 μm, with buried heterostructure grown on mesa substrate and fabricated by single-step crystal growth are reported. In this mesa substrate buried heterostructure (MSB) laser, the GaInAsP active layer was grown separately on the top of a mesa structure formed along the surface of a
Keywords :
Fiber lasers; Gallium arsenide; Indium phosphide; Laser modes; Laser stability; Laser theory; Optical device fabrication; Shape; Substrates; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070436
