Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions

Author

Shi, J.-W. ; Chen, C.-C. ; Wang, C.-K. ; Lin, C.-S. ; Sheu, J.-K. ; Lai, W.-C. ; Kuo, C.-H. ; Tun, C.-J. ; Yang, T.-H. ; Tsao, F.-C. ; Chyi, J.-I.

Author_Institution

Nat. Central Univ., Taoyuan

Volume

20

Issue

6

fYear

2008

fDate

3/15/2008 12:00:00 AM

Firstpage

449

Lastpage

451

Abstract

In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; light emitting diodes; p-n junctions; semiconductor quantum wells; wide band gap semiconductors; GaN; LED; current-voltage performance; dual-wavelength multiple-quantum-wells; electroluminescence spectra; modulation bandwidth; phosphor-free white-light light-emitting diode; transverse p-n junction; Bandwidth; Current measurement; Electroluminescence; Gallium nitride; Light emitting diodes; P-n junctions; Phosphors; Quantum well devices; Shape; Wavelength measurement; GaN light-emitting diodes (LEDs); white-light generation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.916966

Filename

4456733