DocumentCode :
1081150
Title :
The reliability of (AlGa)As CW laser diodes
Author :
Ettenberg, Michael ; Kressel, Henry
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Volume :
16
Issue :
2
fYear :
1980
fDate :
2/1/1980 12:00:00 AM
Firstpage :
186
Lastpage :
196
Abstract :
This paper reviews the major factors bearing on the reliability of (AlGa)As CW laser diodes. The degradation modes of facet mirror damage, contact degradation, and internal damage are discussed in terms of our present knowledge of their effects on device performance, their origin, and their reduction or elimination. Detailed results are presented for oxide-defined stripe-contact lasers and, although reliability results are a strong function of fabrication technology, there are many issues common to all fabrication technologies, and these are emphasized. Lasers have been operated in our laboratory for more than 40 000 h with extrapolations indicating a median time to failure (MTTF) between 105and 106h. In these lasers both facet damage and contact degradation appear to be under control and internal damage remains the dominant failure mechanism. While still not well documented, for internal damage a so called "activation energy" of 0.7 eV may be useful for high temperature accelerated lifetests. Most of the reliability data deals with threshold current increase, however, shifts in far-field pattern and changes in laser modulation characteristics, such as self-sustained oscillations, may affect laser performance in real systems.
Keywords :
Bibliographies; CW lasers; Gallium materials/lasers; Semiconductor device reliability; Degradation; Diode lasers; Extrapolation; Failure analysis; Laboratories; Laser modes; Laser transitions; Mirrors; Optical control; Optical device fabrication;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070446
Filename :
1070446
Link To Document :
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