Hot-electron limited operating voltages for 0.8-µm MOSFET´s

The maximum allowable operating voltage limited by hot-electrons for 0.8-µm MOSFET´s, VGS= VDS, is determined to be 5.5 V at room temperature with VSUB= -2 V, as a result of long-term stress aging. Slow and fast threshold-voltage shifts are observed depending on stress conditions, i.e., the amount of hot-electrons injected into the gate SiO2. Generation of interface trapped charges at the Si-SiO2interface near the drain junction is suggested as a main cause for degradation.