Title :
Noise in GaAs FET´s with a nonuniform channel thickness
Author_Institution :
University of Manchester, Macclesfield, Cheshire
fDate :
10/1/1982 12:00:00 AM
Abstract :
The effects of nonuniformities in the channel thickness of a GaAs FET are investigated and expressions for the dc, small signal, and noise parameters derived. Results of a numerical simulation show that higher transconductance and lower noise would result if the variations in channel thickness were reduced. Experimental evidence shows that the predictions of this model are significant at the 5-percent level.
Keywords :
Electrons; FETs; Gallium arsenide; Manufacturing; Noise generators; Noise reduction; Numerical simulation; Predictive models; Semiconductor process modeling; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20927
