DocumentCode
1081169
Title
Noise in GaAs FET´s with a nonuniform channel thickness
Author
Brookes, T.M.
Author_Institution
University of Manchester, Macclesfield, Cheshire
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1632
Lastpage
1634
Abstract
The effects of nonuniformities in the channel thickness of a GaAs FET are investigated and expressions for the dc, small signal, and noise parameters derived. Results of a numerical simulation show that higher transconductance and lower noise would result if the variations in channel thickness were reduced. Experimental evidence shows that the predictions of this model are significant at the 5-percent level.
Keywords
Electrons; FETs; Gallium arsenide; Manufacturing; Noise generators; Noise reduction; Numerical simulation; Predictive models; Semiconductor process modeling; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20927
Filename
1482424
Link To Document