DocumentCode :
1081248
Title :
I-2 new device phenomena based on multiple layer epitaxy
Author :
Gossard, Arthur C.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1659
Lastpage :
1660
Keywords :
Electron optics; Epitaxial growth; High speed optical techniques; Nonlinear optics; Optical bistability; Optical devices; Optical pumping; Optical superlattices; Ring oscillators; Shape control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20935
Filename :
1482432
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081248