Title :
IIA-1 generalized scaling theory and its application to a 1/4 micron mosfet design
Author :
Baccarani, G. ; Wordeman, M.R. ; Dennard, R.H.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Breakdown voltage; Contact resistance; Impurities; Laboratories; MOSFET circuits; Nitrogen; Shape; Substrates; Temperature dependence; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20937
