Title :
IIA-3 experimental electrical characteristics of submicrometer MOSFETs
Author :
Shichijo, H. ; Lin, Y.T. ; Holloway ; Lin, Y.C. ; Hunter, W.R.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Degradation; Electric variables; Etching; Implants; Instruments; Laboratories; MOS devices; MOSFETs; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20940
