DocumentCode

1081296

Title

IIA-3 experimental electrical characteristics of submicrometer MOSFETs

Author

Shichijo, H. ; Lin, Y.T. ; Holloway ; Lin, Y.C. ; Hunter, W.R.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1661

Lastpage

1662

Keywords

Degradation; Electric variables; Etching; Implants; Instruments; Laboratories; MOS devices; MOSFETs; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20940

Filename

1482437