DocumentCode
1081297
Title
Buried-heterostructure AlGaAs lasers
Author
Saito, Kazutoshi ; Ito, Ryoichi
Author_Institution
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume
16
Issue
2
fYear
1980
fDate
2/1/1980 12:00:00 AM
Firstpage
205
Lastpage
215
Abstract
The optical waveguide, fabrication procedure, major optical properties, and reliability of buried-heterostructure (BH) AlGaAs lasers are described. BH lasers are characterized by low threshold currents (10-20 mA), nearly symmetric beam profile, single-mode oscillation, high linearity, small relaxation oscillations, and long-term mode stability. Moreover, BH lasers with a buried optical guide provide CW output powers of 10-20 mW with an overall power conversion efficiency as high as 35 percent.
Keywords
Gallium materials/lasers; Semiconductor device reliability; Laser beams; Laser modes; Laser stability; Linearity; Optical device fabrication; Optical waveguides; Power generation; Power lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070459
Filename
1070459
Link To Document