Title :
IIA-5 a JMOS transistor fabricated with 100A low pressure nitrided-oxide gate dielectric
Author :
Sodini, Charlie G. ; Wong, S. Simon ; Oldham, W.G.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Boron; Computer simulation; Dielectric devices; Electron mobility; Implants; MOS devices; MOSFETs; Performance evaluation; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20941
