DocumentCode

1081304

Title

IIA-5 a JMOS transistor fabricated with 100A low pressure nitrided-oxide gate dielectric

Author

Sodini, Charlie G. ; Wong, S. Simon ; Oldham, W.G.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1662

Lastpage

1663

Keywords

Boron; Computer simulation; Dielectric devices; Electron mobility; Implants; MOS devices; MOSFETs; Performance evaluation; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20941

Filename

1482438