Title :
Simulating the complexity of regular VLSI layout
Author :
Leung, Yu-Ying J. ; Shanblatt, Michael A.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., Coll. Station, TX, USA
fDate :
2/1/1988 12:00:00 AM
Abstract :
Based on a hierarchical computer-aided design model, the complexity of regular integrated circuit (IC) layout is simulated by a compactness ratio approach. Using a first-order approximation and regular array models, the general expression of the compactness ratio is derived and depicted graphically. The compactness ratio varied with the line width and spacing of the submodules within a circuit and thus can be applied to essentially any IC technology. Sample MOS design results further verify that the compactness ratio and module area are inversely proportional to the number of design levels in the design hierarchy
Keywords :
VLSI; circuit layout CAD; field effect integrated circuits; IC technology; compactness ratio approach; complexity; first-order approximation; line width; module area; regular VLSI layout; regular array models; regular integrated circuit; Circuit simulation; Complexity theory; Computational modeling; Density measurement; Design automation; Design methodology; Genetic expression; Integrated circuit layout; Integrated circuit modeling; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of