Title :
IIA-6 a comparison of buried channel and surface channel MOSFETs for VLSI
Author :
Nguyen, Tuan N. ; Plummer, James D.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Circuits; Computer simulation; Electron mobility; Laboratories; MOS devices; MOSFETs; Performance evaluation; Very large scale integration; Virtual manufacturing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20942
