DocumentCode :
1081321
Title :
IIA-8 ultra-thin gate oxide characteristics and MOSFET scaling implications
Author :
Han, Yu-Pin ; Mize, J.P. ; Pinto, John ; Worley, Robin
Author_Institution :
MOSTEK/Advanced Technology Group Carrollton, Texas
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1664
Lastpage :
1664
Keywords :
Capacitance-voltage characteristics; Current measurement; Dielectric measurements; Electric variables; Electric variables measurement; Ellipsometry; MOS capacitors; MOSFET circuits; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20943
Filename :
1482440
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081321
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