• DocumentCode
    1081321
  • Title

    IIA-8 ultra-thin gate oxide characteristics and MOSFET scaling implications

  • Author

    Han, Yu-Pin ; Mize, J.P. ; Pinto, John ; Worley, Robin

  • Author_Institution
    MOSTEK/Advanced Technology Group Carrollton, Texas
  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1664
  • Lastpage
    1664
  • Keywords
    Capacitance-voltage characteristics; Current measurement; Dielectric measurements; Electric variables; Electric variables measurement; Ellipsometry; MOS capacitors; MOSFET circuits; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20943
  • Filename
    1482440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081321