Title :
A silicon-bipolar amplifier for 10 Gbit/s with 45 dB gain
Author :
Pöhlmann, Wolfgang
Author_Institution :
Alcatel SEL, Stuttgart, Germany
fDate :
5/1/1994 12:00:00 AM
Abstract :
A 10 Gbit/s limiting main amplifier for use in optical transmission systems was implemented in an advanced 0.4 μm silicon-bipolar technology. The device has one differential input and two differential outputs. It is mounted and bonded on a softboard carrier for all of the following measurements. The small signal differential gain is 45 dB and the bandwidth is 9 GHz. The output voltage is limited to 400 mVpp differential at each output. The minimum input voltage for 1.10-9 bit error ratio at a pseudo random word of length 223-1 was measured to be 2.25 mV pp. The chip area is 1.8 mm×3.1 mm. The power dissipation is 400 mW at a single supply voltage of -4 V
Keywords :
bipolar integrated circuits; differential amplifiers; digital communication systems; elemental semiconductors; linear integrated circuits; optical receivers; silicon; wideband amplifiers; -4 V; 0.4 micron; 10 Gbit/s; 400 mW; 45 dB; 9 GHz; Si; Si bipolar amplifier; differential input; differential outputs; limiting main amplifier; optical transmission systems; Bandwidth; Bonding; Gain; Length measurement; Optical amplifiers; Power dissipation; Semiconductor device measurement; Semiconductor optical amplifiers; Stimulated emission; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
