A silicon-bipolar amplifier for 10 Gbit/s with 45 dB gain

Author

Pöhlmann, Wolfgang

Author_Institution

Alcatel SEL, Stuttgart, Germany

Volume

29

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

551

Lastpage

556

Abstract

A 10 Gbit/s limiting main amplifier for use in optical transmission systems was implemented in an advanced 0.4 μm silicon-bipolar technology. The device has one differential input and two differential outputs. It is mounted and bonded on a softboard carrier for all of the following measurements. The small signal differential gain is 45 dB and the bandwidth is 9 GHz. The output voltage is limited to 400 mV_pp differential at each output. The minimum input voltage for 1.10^-9 bit error ratio at a pseudo random word of length 2²³-1 was measured to be 2.25 mV _pp. The chip area is 1.8 mm×3.1 mm. The power dissipation is 400 mW at a single supply voltage of -4 V

Keywords

bipolar integrated circuits; differential amplifiers; digital communication systems; elemental semiconductors; linear integrated circuits; optical receivers; silicon; wideband amplifiers; -4 V; 0.4 micron; 10 Gbit/s; 400 mW; 45 dB; 9 GHz; Si; Si bipolar amplifier; differential input; differential outputs; limiting main amplifier; optical transmission systems; Bandwidth; Bonding; Gain; Length measurement; Optical amplifiers; Power dissipation; Semiconductor device measurement; Semiconductor optical amplifiers; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.284704

Filename

284704