DocumentCode :
1081352
Title :
IIA-10 submicron-length tungsten gate self-aligned GaAs MESFET (late paper)
Author :
Matsumoto, Kaname ; Hashizume, Nobuya ; Atoda, N. ; Nishimura, Kosuke ; Tomizawa, Keiichi ; Endo, T. ; Yamazaki, M. ; Kurosu, Takayuki ; Iida, Michihisa
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1666
Lastpage :
1666
Keywords :
Bonding; Cathodes; FETs; Gallium arsenide; Glass; MESFETs; Optical devices; Optical imaging; Temperature; Tungsten;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20946
Filename :
1482443
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081352
