IIA-10 submicron-length tungsten gate self-aligned GaAs MESFET (late paper)

Author

Matsumoto, Kaname ; Hashizume, Nobuya ; Atoda, N. ; Nishimura, Kosuke ; Tomizawa, Keiichi ; Endo, T. ; Yamazaki, M. ; Kurosu, Takayuki ; Iida, Michihisa

Volume

Issue

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1666

Lastpage

1666

Keywords

Bonding; Cathodes; FETs; Gallium arsenide; Glass; MESFETs; Optical devices; Optical imaging; Temperature; Tungsten;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1982.20946

Filename

1482443

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