Title :
IIB-3 new interdigitated pn junction device with novel capacitance-voltage characteristic and ultrahigh optical sensitivity
Author :
Capasso, Federico ; Logan, R.A. ; Tsang, W.T. ; Hayes, J.R.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Capacitance; Capacitance-voltage characteristics; Charge coupled devices; Etching; Gallium arsenide; High speed optical techniques; Optical devices; Optical receivers; Optical sensors; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20947
