Title :
Current-voltage characteristics of bend in mesoscopic wire
Author :
Thornton, Trevor J. ; Yamada, Shigeru ; Yamamoto, Manabu ; Aihara, Kazuyuki
Author_Institution :
NTT Basic Res. Labs., Tokyo, Japan
fDate :
6/20/1991 12:00:00 AM
Abstract :
The four terminal resistance of a bend in a mesoscopic wire changes sign with increasing temperature. This transition leads to a nonlinear I/V characteristic which can, under suitable bias conditions, be used to produce frequency doubling.
Keywords :
carrier mobility; negative resistance; quantum interference phenomena; semiconductor quantum wires; ballistic wire junction; bend resistance; bias conditions; crossed wire junction; four terminal resistance; frequency doubling; mesoscopic wire; nonlinear I/V characteristic; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910734
