DocumentCode :
1081422
Title :
IIB-8 influence of misfit dislocations on 1.3 µm InP/InGaAsP avalanche photodiode
Author :
Kondo, K. ; Yamazaki, Shumpei ; Komiya, Seiichi ; Nakajima, Kensuke ; Umebu, I. ; Kaneda, Tadahiro ; Akita, K.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1670
Lastpage :
1670
Keywords :
Avalanche photodiodes; Diodes; Epitaxial growth; Etching; Indium phosphide; Ionization; Laboratories; Photoconductivity; Substrates; Surfaces;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20951
Filename :
1482448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081422
