Title :
A multiple-dimensional multiple-state SRAM cell using resonant tunneling diodes
Author :
Shieh, Ming-Huei ; Lin, Hung Chang
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
Several designs are presented for a multiple-dimensional multiple-state SRAM cell based on resonant tunneling diodes (RTDs). The proposed cells take advantages of the hysteresis and folding I-V characteristics of the RTD. When properly biased, the cell can operate up to (N+1)m or more number of stable quantized operating states, where N is the number of current-peaks of the RTD and m is the number of access lines. A two dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs
Keywords :
SRAM chips; hysteresis; resonant tunnelling devices; tunnel diodes; 2D nine-state memory cell; RTD based circuit; folding I-V characteristics; hysteresis; multiple-dimensional SRAM cell; multiple-state SRAM cell; resonant tunneling diodes; stable quantized operating states; Circuits; Delay; Diodes; Fabrication; Hysteresis; Logic; Random access memory; Resistors; Resonant tunneling devices; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
