DocumentCode
1081483
Title
Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs
Author
Shin, Jung H. ; Lee, Jinku ; Han, Hak-seung ; Jhe, Ji-Hong ; Chang, Jee Soo ; Seo, Se-Young ; Lee, Hansuek ; Park, Namkyoo
Author_Institution
Dept. of Phys., Korea Adv. Energy Res. Inst., Daejeon
Volume
12
Issue
4
fYear
2006
Firstpage
783
Lastpage
796
Abstract
A review is presented of Si nanocluster sensitization of Er-doped silica for planar optical amplifiers using top-pumping 470-nm light-emitting diodes (LEDs). The motivation and basic physical principles underlying the nanocluster sensitization are first reviewed. The material structures necessary for optimum performances are presented, with emphasis on the need for nanoscale engineering of the composition and structure. Evidence of optical gain using commercial GaN-visible LEDs are presented, and the simulation results of possible device performances described. Finally, some possible future directions for research are discussed
Keywords
III-V semiconductors; elemental semiconductors; erbium; gallium compounds; light emitting diodes; nanostructured materials; nanotechnology; optical pumping; silicon; silicon compounds; solid lasers; wide band gap semiconductors; 470 nm; Er-doped silica; GaN; Si; Si nanocluster; SiO2:Er; planar optical amplifiers; sensitization; visible LED; Composite materials; Light emitting diodes; Optical amplifiers; Optical devices; Optical materials; Optical sensors; Performance gain; Semiconductor optical amplifiers; Silicon compounds; Stimulated emission; Erbium; microphotonics; optical amplifier; silicon nanocrystal;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2006.876160
Filename
1668123
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