Title :
IIIA-5 low threshold, high efficiency Ga1-xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition
Author :
Burnham, R.D. ; Scifres, D.R. ; Streifer, W.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Chemical lasers; Dielectric substrates; Epitaxial growth; Gallium arsenide; MOCVD; Monolithic integrated circuits; Optical devices; Pulsed laser deposition; Quantum well lasers; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20957
