• DocumentCode
    1081495
  • Title

    IIIA-6 GaAlAs/GaAs MOCVD selective epitaxy for monolithic optical device integration with comples GaAs IC´s

  • Author

    Kim, May E. ; Hong, Choong ; Kasemset, D. ; Coleman, J.J. ; Bernescut, R. ; Patel, N.B. ; Dapkus, P.D.

  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1674
  • Lastpage
    1675
  • Keywords
    Epitaxial growth; Etching; Gallium arsenide; Indium phosphide; MOCVD; Monolithic integrated circuits; Optical devices; Optical signal processing; Optical transmitters; Photonic integrated circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20958
  • Filename
    1482455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081495