DocumentCode :
1081556
Title :
IIIB-5 high voltage electron beam lithography for VLSI fabrication
Author :
Yoshimi, Masato ; Takahashi, Masaharu ; Kawabuchi, K. ; Kato, Yu ; Takigawa, T.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1678
Lastpage :
1679
Keywords :
Bipolar transistors; CMOS process; Circuits; Contact resistance; Electron beams; Fabrication; Lithography; Resists; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20964
Filename :
1482461
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081556
