• DocumentCode
    1081570
  • Title

    IIIB-6 high performance bipolar transistors in a CMOS process

  • Author

    Sullivan, Philip

  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1679
  • Lastpage
    1680
  • Keywords
    Bipolar transistors; CMOS process; Circuits; Contact resistance; Implants; Microelectronics; Read-write memory; Silicon; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20965
  • Filename
    1482462