Title :
IIIB-8 gigaohm-range polycrystalline silicon load elements for a CMOS 16K static RAM
fDate :
10/1/1982 12:00:00 AM
Keywords :
Circuits; Electron devices; Glass; Microelectronics; Random access memory; Read-write memory; Silicon; Thin film transistors; Voltage; Wafer bonding;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20967
