Title :
IVB-1 GaAs MESFETs with a partially p type drain
Author :
Lee, Charlotte P. ; Welch, B.M.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Circuits; Contracts; Etching; FETs; Gallium arsenide; Hysteresis; Implants; MESFETs; Optical films; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20976
