Title :
IVB-10 engineered Al - GaAs Schottky barrier heights by MBE
Author :
Eglash, S.J. ; Spicer, W.E. ; Collins, D.M.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Solid state circuits; Surface morphology; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20981
