Title :
VA-4 charge components of the MOS transistor and their importance for transient simulations
Author :
Taylor, Graham W. ; Fichtner, Wolf
fDate :
10/1/1982 12:00:00 AM
Keywords :
Admittance; Capacitance; Circuit simulation; Implants; Inverters; MOS devices; MOSFETs; Semiconductor process modeling; Shape; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20986
