Title :
VA-5 a new approach to modeling ion implanted channels in MOSFETs and application to sensitivity analysis
Author :
Leiss, John E. ; Chatterjee, Pallab K.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
fDate :
10/1/1982 12:00:00 AM
Keywords :
Implants; Instruments; Ion implantation; MOSFETs; Process control; Semiconductor process modeling; Sensitivity analysis; Shape; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20987
