DocumentCode :
1081802
Title :
VA-5 a new approach to modeling ion implanted channels in MOSFETs and application to sensitivity analysis
Author :
Leiss, John E. ; Chatterjee, Pallab K.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1694
Lastpage :
1694
Keywords :
Implants; Instruments; Ion implantation; MOSFETs; Process control; Semiconductor process modeling; Sensitivity analysis; Shape; Threshold voltage; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20987
Filename :
1482484
Link To Document :
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