DocumentCode
1081802
Title
VA-5 a new approach to modeling ion implanted channels in MOSFETs and application to sensitivity analysis
Author
Leiss, John E. ; Chatterjee, Pallab K.
Author_Institution
Texas Instruments Incorporated, Dallas, Texas
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1694
Lastpage
1694
Keywords
Implants; Instruments; Ion implantation; MOSFETs; Process control; Semiconductor process modeling; Sensitivity analysis; Shape; Threshold voltage; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20987
Filename
1482484
Link To Document