• DocumentCode
    1081831
  • Title

    VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet

  • Author

    Liao, A.S.H. ; Tell, B. ; Leheny, R.F. ; Chang, T.Y. ; Nahory, R.E.

  • Author_Institution
    Bell Laboratories, Holmdel, New Jersey
  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1696
  • Lastpage
    1696
  • Keywords
    Electron devices; Electron mobility; FETs; High-speed electronics; Indium gallium arsenide; Insulation; Optoelectronic devices; Plasma devices; Plasma materials processing; Plasma waves;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20990
  • Filename
    1482487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081831