DocumentCode :
1081831
Title :
VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet
Author :
Liao, A.S.H. ; Tell, B. ; Leheny, R.F. ; Chang, T.Y. ; Nahory, R.E.
Author_Institution :
Bell Laboratories, Holmdel, New Jersey
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1696
Lastpage :
1696
Keywords :
Electron devices; Electron mobility; FETs; High-speed electronics; Indium gallium arsenide; Insulation; Optoelectronic devices; Plasma devices; Plasma materials processing; Plasma waves;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20990
Filename :
1482487
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081831
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