DocumentCode
1081841
Title
VB-4 insulated gate field effect transistors with the conduction channel placed at semiconductor-semiconductor interfaces
Author
Chen, C.Y. ; Cho, Andrew Y. ; Gossard, Arthur C.
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1697
Lastpage
1698
Keywords
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Schottky diodes; Semiconductor diodes; Surface resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20991
Filename
1482488
Link To Document