DocumentCode :
1081850
Title :
VB-3 In
0.47
Ga
0.53
As FETs with insulator-assisted Schottky gates
Author :
O´Connor, P. ; Pearsall, T.P. ; Cheng, K.Y. ; Cho, Andrew Y. ; Hwang, James C. M. ; Alavi, K.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1697
Lastpage :
1697
Keywords :
Capacitance-voltage characteristics; Electrons; Epitaxial layers; FETs; Gallium arsenide; Indium phosphide; Insulation; Leakage current; Substrates; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20992
Filename :
1482489
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081850
