• DocumentCode
    1081865
  • Title

    VB-5 camel diode gate GaAs and GaAs/AlxGa1-xAs modulation doped FETs

  • Author

    Thorne, R.E. ; Kopp, W. ; Su, S.L. ; Fischer, Ray ; Drummond, T.J. ; Morkoc, H.

  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1698
  • Lastpage
    1699
  • Keywords
    Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; Schottky diodes; Semiconductor diodes; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20993
  • Filename
    1482490