DocumentCode :
1081865
Title :
VB-5 camel diode gate GaAs and GaAs/Al
x
Ga
1-x
As modulation doped FETs
Author :
Thorne, R.E. ; Kopp, W. ; Su, S.L. ; Fischer, Ray ; Drummond, T.J. ; Morkoc, H.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1698
Lastpage :
1699
Keywords :
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; Schottky diodes; Semiconductor diodes; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20993
Filename :
1482490
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081865
