DocumentCode
1081865
Title
VB-5 camel diode gate GaAs and GaAs/Alx Ga1-x As modulation doped FETs
Author
Thorne, R.E. ; Kopp, W. ; Su, S.L. ; Fischer, Ray ; Drummond, T.J. ; Morkoc, H.
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1698
Lastpage
1699
Keywords
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; Schottky diodes; Semiconductor diodes; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20993
Filename
1482490
Link To Document