DocumentCode :
1081882
Title :
VB-9 Monte Carlo simulation of a submicron-sized GaAs n
+
-i(n)-n
+
diode
Author :
Awano, Yuji ; Tomizawa, Keiichi ; Hashizume, Nobuya ; Kawashima, Mitsumasa
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1699
Lastpage :
1700
Keywords :
Annealing; Anodes; Backscatter; Cathodes; Diodes; Electrons; Gallium arsenide; Indium phosphide; Plasma temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20994
Filename :
1482491
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081882
