Title :
VB-7 the modulation doped GaInAs/AlInAs MESFET
Author :
Barnard, J.A. ; Wicks, G. ; Eastman, L.F.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Anodes; Cathodes; Diodes; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; MESFETs; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20995
