Title :
VIA-1 effects of hot-carrier trapping in n- and p-channel MOSFETs
Author :
Ng, Kang Kee ; Taylor, Graham W.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Degradation; Diodes; Electron devices; Electron traps; Hot carrier effects; Hot carriers; Interface states; MOSFET circuits; Stress; Subthreshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20997
