DocumentCode :
1081949
Title :
VIA-3 measurement of interface trapped charge in short-channel MOSFETs
Author :
Russell, T.J. ; Wilson, C.L. ; Gaitan, M.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1702
Lastpage :
1702
Keywords :
Avalanche breakdown; Charge measurement; Charge pumps; Circuits; Current measurement; Electric breakdown; MOS capacitors; MOSFETs; Pollution measurement; Subthreshold current;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20999
Filename :
1482496
Link To Document :
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