DocumentCode

1081962

Title

VIA-5 hot-electron induced excess carriers in n-channel MOSFETs

Author

Tam, Simon ; Ko, Pat ; Hsu, F.-C. ; Hu, Chuanmin ; Muller, R.S.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1703

Lastpage

1704

Keywords

Charge carrier lifetime; Charge carrier processes; Contracts; Electron emission; Electron mobility; MOSFETs; NIST; Predictive models; Silicon; Statistics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.21000

Filename

1482497