DocumentCode :
1081962
Title :
VIA-5 hot-electron induced excess carriers in n-channel MOSFETs
Author :
Tam, Simon ; Ko, Pat ; Hsu, F.-C. ; Hu, Chuanmin ; Muller, R.S.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1703
Lastpage :
1704
Keywords :
Charge carrier lifetime; Charge carrier processes; Contracts; Electron emission; Electron mobility; MOSFETs; NIST; Predictive models; Silicon; Statistics;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.21000
Filename :
1482497
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081962
