Title :
VIA-7 submission for the device research conference march 3, 1982, improved models for predicting the gain of bipolar structures in silicon
Author :
Bennett, H.S. ; Lowney, J.R.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Charge carrier processes; Electron mobility; Gain measurement; NIST; Photonic band gap; Physics; Predictive models; Radiative recombination; Silicon; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21001
