Title :
VIA-10 technology and performance of SIPOS heterojunction emitters
Author :
Kwark, Young H. ; Swanson, Richard M.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Annealing; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Metallization; Numerical analysis; Parasitic capacitance; Passivation; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21003
