Title :
Punch-through type InGaAs photodetector fabricated by vapor-phase epitaxy
Author :
Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Kanbe, Hiroshi ; Susa, N. ; Yamauchi, Yuji ; Kanbe, H.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
5/1/1980 12:00:00 AM
Abstract :
Punch-through type InGaAs/InP photodiodes were made from high purity layers grown on
Keywords :
Punchthrough diodes; Dark current; Diodes; Epitaxial growth; Etching; Indium gallium arsenide; Indium phosphide; Low voltage; Photodetectors; Photodiodes; Substrates;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070525
