• DocumentCode
    1082009
  • Title

    Piezoelectrically actuated tunable capacitor

  • Author

    Lee, Chuang-Yuan ; Kim, Eun Sok

  • Author_Institution
    Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA
  • Volume
    15
  • Issue
    4
  • fYear
    2006
  • Firstpage
    745
  • Lastpage
    755
  • Abstract
    This paper describes the design, fabrication, and characterization of the first MEMS piezoelectric tunable capacitors employing zinc oxide (ZnO) actuation. Relatively simple design rules for the device-structure optimization for largest deflection are shown from simulation results based on theoretical equations. The ZnO-actuated tunable capacitors are accordingly designed and fabricated with both surface and bulk micromachining techniques. Through the surface micromachining process, sacrificial silicon is removed with XeF2, and parylene is successfully used as a supporting layer for a piezoelectric unimorph cantilever. For comparison, other two different structures using plasma-enhanced chemical-vapor deposition (PECVD) SiN and SU-8 as supporting layers are also fabricated. Deflection analyses are performed for three specific structures, among which the parylene-supported one is demonstrated to have the largest displacement and most suitable for tunable capacitor application. For bulk-micromachined tunable capacitor, we have implemented a novel design of a large structure driven by a ZnO unimorph, and obtained a tuning ratio of more than 21:1 (0.46 pF-10.02 pF). This is the highest tuning ratio reported to date for parallel-plate tunable capacitors while requiring an applied voltage of only 35 V
  • Keywords
    II-VI semiconductors; capacitors; microactuators; micromachining; piezoelectric actuators; wide band gap semiconductors; zinc compounds; 0.46 to 10.02 pF; 35 V; MEMS piezoelectric tunable capacitors; SU-8 layer; SiN; ZnO; bulk micromachining technique; parylene; piezoelectric actuator; piezoelectric unimorph cantilever; plasma-enhanced chemical-vapor deposition; sacrificial silicon; supporting layers; surface micromachining technique; Capacitors; Design optimization; Equations; Fabrication; Micromachining; Micromechanical devices; Plasma applications; Plasma chemistry; Silicon; Zinc oxide; Parylene; tunable capacitor; zinc oxide;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2006.878886
  • Filename
    1668169