DocumentCode :
1082009
Title :
Piezoelectrically actuated tunable capacitor
Author :
Lee, Chuang-Yuan ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA
Volume :
15
Issue :
4
fYear :
2006
Firstpage :
745
Lastpage :
755
Abstract :
This paper describes the design, fabrication, and characterization of the first MEMS piezoelectric tunable capacitors employing zinc oxide (ZnO) actuation. Relatively simple design rules for the device-structure optimization for largest deflection are shown from simulation results based on theoretical equations. The ZnO-actuated tunable capacitors are accordingly designed and fabricated with both surface and bulk micromachining techniques. Through the surface micromachining process, sacrificial silicon is removed with XeF2, and parylene is successfully used as a supporting layer for a piezoelectric unimorph cantilever. For comparison, other two different structures using plasma-enhanced chemical-vapor deposition (PECVD) SiN and SU-8 as supporting layers are also fabricated. Deflection analyses are performed for three specific structures, among which the parylene-supported one is demonstrated to have the largest displacement and most suitable for tunable capacitor application. For bulk-micromachined tunable capacitor, we have implemented a novel design of a large structure driven by a ZnO unimorph, and obtained a tuning ratio of more than 21:1 (0.46 pF-10.02 pF). This is the highest tuning ratio reported to date for parallel-plate tunable capacitors while requiring an applied voltage of only 35 V
Keywords :
II-VI semiconductors; capacitors; microactuators; micromachining; piezoelectric actuators; wide band gap semiconductors; zinc compounds; 0.46 to 10.02 pF; 35 V; MEMS piezoelectric tunable capacitors; SU-8 layer; SiN; ZnO; bulk micromachining technique; parylene; piezoelectric actuator; piezoelectric unimorph cantilever; plasma-enhanced chemical-vapor deposition; sacrificial silicon; supporting layers; surface micromachining technique; Capacitors; Design optimization; Equations; Fabrication; Micromachining; Micromechanical devices; Plasma applications; Plasma chemistry; Silicon; Zinc oxide; Parylene; tunable capacitor; zinc oxide;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2006.878886
Filename :
1668169
Link To Document :
بازگشت