DocumentCode :
1082013
Title :
VIB-2 lateral pnp GaAs bipolar transistor with minimized substrate currents
Author :
Krautle, H. ; Narozny, P. ; Beneking, H.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1707
Lastpage :
1707
Keywords :
Annealing; Bipolar transistor circuits; Bipolar transistors; Epitaxial layers; Gallium arsenide; Ion implantation; Logic circuits; Protection; Resists; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.21005
Filename :
1482502
Link To Document :
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