Title :
VIB-9 high energy injection and transient electron transport in gallium arsenide
Author :
Tang, Jean Y. ; Hess, K. ; Iafrate, G.J. ; Malik, Rohit
fDate :
10/1/1982 12:00:00 AM
Keywords :
Electrons; Epitaxial growth; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21011
